MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35
نویسندگان
چکیده
We present a study on the high performance p-type AlxGa1 xN (x 1⁄4 0:35) layers grown by low-pressure metalorganic chemical vapor deposition on AlN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1 xN (x 1⁄4 0:35) alloy is investigated. From the Hall effect and I–V transmission line model measurements, a p-type resistivity of 3.5O cm for AlxGa1 xN (x 1⁄4 0:35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature. r 2006 Elsevier B.V. All rights reserved. PACS: 81.15.Gh; 73.61.Ey
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